| PART |
Description |
Maker |
| BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
EEPROM (4kx8) 32K 2.5-6.0
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (1024x8) 8K
EEPROM 256K X 8 200ns
EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C
EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
EEPROM 128K X 8 150ns
EEPROM (8kx8) 64K 1.8-6.0
EEPROM (2048x8)(1024x16)16K
EEPROM U 804-29EE0107CWH
EEPROM 64K X 8 70ns
EEPROM (256x8) 2K 2.5-6.0
EEPROM (8kx8) 64K 2.5-6.0
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP
EEPROM (384x8) 128k 16
EEPROM SPI 1KBIT
EEPROM SPI 4096X8 BIT
EEPROM SRL 64X16 BIT
EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
EEPROM 2kb 1.7-5.5V Ind I2C
EEPROM 512K-Bit CMOS PARA EEPROM
EEPROM (32kx8) 256K 3V 250
EEPROM 64K X 8 512K 5V 150
EEPROM 256K (32KX8)
|
Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
BCD Semiconductor Manufacturing, Ltd.
Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| AT28HC256F-12UM_883 AT28HC256F-90FM_883 AT28HC256E |
256 (32K x 8) High-speed Parallel EEPROM
32K X 8 EEPROM 5V, 90 ns, PQCC32 PLASTIC, MS-016AE, LCC-32
70NS, TSOP, IND TEMP(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PDSO28
70NS, PLCC, IND TEMP, GREEN PKG(EEPROM) 32K X 8 EEPROM 5V, 70 ns, PQCC32
90NS, PDIP, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 90 ns, PDIP28
120NS, SOIC, IND TEMP, GREEN(EEPROM) 32K X 8 EEPROM 5V, 120 ns, PDSO28
|
ATMEL Corporation
Atmel, Corp.
ATM Electronic, Corp.
|
| AT28BV256-20PI AT28BV256-20PU AT28BV256-20JI AT28B |
200NS, SOIC, IND TEMP(EEPROM) 32K X 8 EEPROM 3V, 200 ns, PDSO28
256K (32K x 8) Battery-Voltage Parallel EEPROMs
|
Atmel, Corp.
ATMEL Corporation
|
| 28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns.
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| UPD43257BGU-70L UPD43257BGU-70LL UPD43257BGU-85L U |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
MOS INTEGRATED CIRCUIT 256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| IS25C256 IS25C256-2GI IS25C256-2GLI IS25C256-2PI I |
128K-bit/ 256K-bit SPI SERIAL ELECTRICALLY ERASABLE PROM 32K X 8 SPI BUS SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc.
|
| CY7C199CN-20ZXIT CY7C199CNL-15VC CY7C199CN-20ZI CY |
256K (32K x 8) Static RAM; Density: 256 Kb; Organization: 32Kb x 8; Vcc (V): 4.5 to 5.5 V; 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
256K (32K x 8) Static RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
|
Cypress Semiconductor, Corp.
|
| 24C256 24C128 |
CMOS I2C 2-WIRE BUS 128K/256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 16K/32K X 8 BIT EEPROM
|
List of Unclassifed Man...
ETC[ETC]
List of Unclassifed Manufacturers
|
| 74LVT162245MEAX |
256K, 32K X 8, 2.5V SER EEPROM, -40C to 125C, 8-TSSOP, TUBE 位总线收发
|
Fairchild Semiconductor, Corp.
|
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